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SA5211 transimpedance amplifier (180mhz) product specification replaces datasheet ne/SA5211 of 1995 apr 26 ic19 data handbook 1998 oct 07 integrated circuits
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 2 1998 oct 07 853-1799 20142 description the SA5211 is a 28k w transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. the part is ideally suited for many other rf applications as a general purpose gain block. features ? extremely low noise: 1.8pa hz ? single 5v supply ? large bandwidth: 180mhz ? differential outputs ? low input/output impedances ? high power supply rejection ratio ? 28k w differential transresistance applications ? fiber optic receivers, analog and digital ? current-to-voltage converters ? wide-band gain block pin configuration 1 2 3 4 5 6 78 14 13 12 11 10 9 gnd 2 gnd 2 nc i in nc v cc1 v cc2 gnd 1 gnd 1 gnd 1 gnd 1 gnd 2 out () out (+) d package top view sd00318 figure 1. pin configuration ? medical and scientific instrumentation ? sensor preamplifiers ? single-ended to differential conversion ? low noise rf amplifiers ? rf signal processing ordering information description temperature range order code dwg # 14-pin plastic small outline (so) package -40 to +85 c SA5211d sot108-1 absolute maximum ratings symbol parameter rating unit symbol parameter rating unit v cc power supply 6 v t a operating ambient temperature range -40 to +85 c t j operating junction temperature range -55 to +150 c t stg storage temperature range -65 to +150 c p d max power dissipation, t a =25 c (still-air) 1 1.0 w i in max maximum input current 2 5 ma q ja thermal resistance 125 c/w notes: 1. maximum dissipation is determined by the operating ambient temperature and the thermal resistance: q ja =125 c/w 2. the use of a pull-up resistor to v cc , for the pin diode is recommended.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 3 recommended operating conditions symbol parameter rating unit v cc supply voltage 4.5 to 5.5 v t a ambient temperature range -40 to +85 c t j junction temperature range -40 to +105 c dc electrical characteristics min and max limits apply over operating temperature range at v cc =5v, unless otherwise specified. typical data apply at v cc =5v and t a =25 c. symbol parameter test conditions min typ max unit v in input bias voltage 0.55 0.8 1.00 v v o output bias voltage 2.7 3.4 3.7 v v os output offset voltage 0 130 mv i cc supply current 20 26 31 ma i omax output sink/source current 1 3 4 ma i in input current (2% linearity) test circuit 8, procedure 2 20 40 m a i in max maximum input current overload threshold test circuit 8, procedure 4 30 60 m a notes: 1. test condition: output quiescent voltage variation is less than 100mv for 3ma load current.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 4 ac electrical characteristics typical data and min and max limits apply at v cc =5v and t a =25 c symbol parameter test conditions min typ max unit r t transresistance (differential output) dc tested r l = test circuit 8, procedure 1 21 28 36 k w r o output resistance (differential output) dc tested 30 w r t transresistance (single-ended output) dc tested r l = 10.5 14 18.0 k w r o output resistance (single-ended output) dc tested 15 w f 3db bandwidth (-3db) t a = 25 c test circuit 1 180 mhz r in input resistance 200 w c in input capacitance 4 pf d r/ d v transresistance power supply sensitivity v cc = 5 0.5v 3.7 %/v d r/ d t transresistance ambient temperature sensitivity d t a = t a max -t a min 0.025 %/ c i n rms noise current spectral density (referred to input) test circuit 2 f = 10mhz t a = 25 c 1.8 pa/ hz i t integrated rms noise current over the bandwidth (referred to input) t a = 25 c test circuit 2 1 d f = 50mhz 13 c s =0 1 d f = 100mhz 20 na d f = 200mhz 35 d f = 50mhz 13 c s =1pf d f = 100mhz 21 na d f = 200mhz 41 psrr power supply rejection ratio 2 (v cc1 = v cc2 ) dc tested, d v cc = 0.1v equivalent ac test circuit 3 23 32 db psrr power supply rejection ratio 2 (v cc1 ) dc tested, d v cc = 0.1v equivalent ac test circuit 4 23 32 db psrr power supply rejection ratio 2 (v cc2 ) dc tested, d v cc = 0.1v equivalent ac test circuit 5 45 65 db psrr power supply rejection ratio (ecl configuration) 2 f = 0.1mhz test circuit 6 23 db v omax maximum differential output voltage swing r l = test circuit 8, procedure 3 1.7 3.2 v p-p v in max maximum input amplitude for output duty cycle of 50 5% 3 test circuit 7 160 mv p-p t r rise time for 50mv output signal 4 test circuit 7 0.8 1.8 ns notes: 1. package parasitic capacitance amounts to about 0.2pf 2. psrr is output referenced and is circuit board layout dependent at higher frequencies. for best performance use rf filter in v cc lines. 3. guaranteed by linearity and overload tests. 4. t r defined as 20-80% rise time. it is guaranteed by -3db bandwidth test.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 5 test circuits test circuit 2 test circuit 1 r t v out v in r 2 s21 rr t v out v in r 4 s21 r single-ended differential r o z o 1 s22 1 s22 33 r o 2z o 1 s22 1 s22 66 network analyzer s-parameter test set port 1 port 2 5v 33 in dut out out 50 33 gnd 1 gnd 2 v cc1 v cc2 z o = 50 0.1 m f r l = 50 r = 1k 0.1 m f 0.1 m f spectrum analyzer 5v 33 in dut out out 33 gnd 1 gnd 2 v cc1 v cc2 0.1 m f r l = 50 0.1 m f a v = 60db nc z o = 50 z o = 50 sd00319 figure 2. test circuits 1 and 2
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 6 test circuits (continued) test circuit 4 test circuit 3 network analyzer s-parameter test set port 1 port 2 v cc2 v cc1 gnd 1 gnd 2 in current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 50 unbal. network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 50 unbal. v cc1 v cc2 in 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 0.1 m f 10 m f 5v 10 m f 10 m f gnd 1 gnd 2 sd00320 figure 3. test circuits 3 and 4
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 7 test circuits (continued) network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 5v out out bal. 50 unbal. v cc2 v cc1 in 0.1 m f 0.1 m f 10 m f 0.1 m f 0.1 m f 0.1 m f 10 m f 5v test circuit 6 test circuit 5 network analyzer s-parameter test set port 1 port 2 current probe 1mv/ma cal test transformer nh0300hb 100 33 33 16 out out bal. 50 unbal. gnd 2 gnd 1 v cc1 v cc2 in 0.1 m f 0.1 m f 0.1 m f 10 m f gnd 0.1 m f 10 m f 5.2v 10 m f gnd 2 gnd 1 sd00321 figure 4. test circuits 5 and 6
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 8 test circuits (continued) test circuit 7 oscilloscope 33 33 1k out out gnd 2 gnd 1 v cc1 v cc2 in 0.1 m f 0.1 m f pulse gen. measurement done using differential wave forms 0.1 m f 50 z o = 50 w a b z o = 50 w dut sd00322 figure 5. test circuit 7
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 9 test circuits (continued) gnd 2 test circuit 8 out + out gnd 1 in dut i in ( m a) 5v v out (v) + typical differential output voltage vs current input 2.00 1.60 1.20 0.80 0.40 0.00 0.40 0.80 1.20 1.60 2.00 100 80 60 40 20 0 20 40 60 80 100 differential output voltage (v) current input ( m a) ne5211 test conditions procedure 1 r t measured at 15 m a r t = (v o1 v o2 )/(+15 m a (15 m a)) where: v o1 measured at i in = +15 m a v o2 measured at i in = 15 m a procedure 2 linearity = 1 abs((v oa v ob ) / (v o3 v o4 )) where: v o3 measured at i in = +30 m a v o4 measured at i in = 30 m a v oa r t ( 30 a) v ob v ob r t ( 30 a) v ob procedure 3 v omax = v o7 v o8 where: v o7 measured at i in = +65 m a v o8 measured at i in = 65 m a procedure 4 i in test pass conditions: v o7 v o5 > 20mv and v 06 v o5 > 50mv where: v o5 measured at i in = +40 m a v o6 measured at i in = 400 m a v o7 measured at i in = +65 m a v o8 measured at i in = 65 m a sd00331 figure 6. test circuit 8
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 10 typical performance characteristics differential output voltage (v) differential output voltage (v) output voltage (v) output bias voltage (v) ne5211 supply current vs temperature ne5211 output bias voltage vs temperature ne5211 output voltage vs input current ne5211 input bias voltage vs temperature ne5211 output bias voltage vs temperature ne5211 differential output voltage vs input current ne5211 output offset voltage vs temperature ne5211 differential output swing vs temperature ne5211 output voltage vs input current ambient temperature ( c) 60 20 0 20 40 60 80 100 120 30 40 total supply current (ma) (i + i ) cc1 cc2 3.50 3.45 3.40 3.35 3.30 3.25 output bias voltage (v) v cc = 5.0v pin 14 pin 12 950 input bias voltage (mv) 5.5v 4.5v 40 output offset voltage (mv) 5.5v 5.0v 4.5v v os = v out12 v out14 4.1 3.9 3.7 3.5 3.3 3.1 2.9 2.7 pin 14 5.5v 5.0v 4.5v differential output swing (v) 4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6 5.5v 5.0v 4.5v 2.4 2.2 dc tested r l = 4.5 2.5 100.0 0 +100.0 input current ( m a) +25 c +125 c +85 c 55 c +125 c +85 c 2.0 0 2.0 100.0 0 +100.0 input current ( m a) 5.5v 5.0v 4.5v 5.5v 5.0v 4.5v 2.0 0 2.0 100.0 0 +100.0 input current ( m a) +125 c +85 c +25 c 55 c 140 28 26 24 22 20 18 5.5v 4.5v 5.0v 60 20 0 20 40 60 80 100 120 40 140 ambient temperature ( c) 60 20 0 20 40 60 80 100 120 40 140 ambient temperature ( c) 900 850 800 750 700 650 60 20 0 20 40 60 80 100 120 40 140 ambient temperature ( c) 60 20 0 20 40 60 80 100 120 40 140 ambient temperature ( c) 20 0 20 40 60 80 100 120 140 60 20 0 20 40 60 80 100 120 40 140 ambient temperature ( c) +25 c 55 c 55 c +25 c +85 c 55 c +25 c +125 c +85 c sd00332 +125 c figure 7. typical performance characteristics
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 11 typical performance characteristics (continued) population (%) ne5211 differential transresistance vs temperature ne5211 gain vs frequency ne5211 bandwidth vs temperature ne5211 typical bandwidth distribution (70 parts from 3 wafer lots) ne5211 gain and phase shift vs frequency 60 50 40 30 20 10 143 155 167 179 191 203 frequency (mhz) pin 12 single-ended r l = 50 w v cc = 5.0v t a = 25 c 0 17 0.1 1 10 100 frequency (mhz) gain (db) pin 12 r l = 50 w t a = 25 c 16 15 14 13 12 11 10 9 8 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 14 r l = 50 w t a = 25 c 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 12 v cc = 5v 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 pin 14 v cc = 5v 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 33 60 40 20 0 20 40 100 60 120 80 differential transresistance (k ) 140 ambient temperature ( c) dc tested r l = w 32 31 30 29 28 27 220 60 40 20 0 20 40 100 60 120 80 bandwidth (mhz) 140 ambient temperature ( c) 200 180 160 140 120 100 pin 12 single-ended r l = 50 w 120 60 0 60 120 phase ( ) o pin 12 v cc = 5v t a = 25 c 17 0.1 1 10 100 frequency (mhz) gain (db) 16 15 14 13 12 11 10 9 8 120 phase ( ) o 270 5.5v 4.5v 5.0v 5.5v 4.5v 5.0v 5.5v 4.5v 5.0v pin 14 v cc = 5v t a = 25 c 5.5v 4.5v 5.0v 55 c 125 c 85 c 25 c 55 c 125 c 85 c 25 c ne5211 gain vs frequency ne5211 gain vs frequency ne5211 gain vs frequency ne5211 gain and phase shift vs frequency sd00333 figure 8. typical performance characteristics (cont.)
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 12 typical performance characteristics (continued) ne5211 output resistance vs temperature ne5211 output resistance vs temperature ne5211 output resistance vs temperature ne5211 output resistance vs frequency ne5211 power supply rejection ratio vs temperature ne5211 group delay vs frequency ne5211 output resistance vs frequency ne5211 output resistance vs frequency 18 60 40 20 0 20 40 100 60 120 80 output resistance ( ) 140 ambient temperature ( c) 10 0.1 17 16 15 14 13 pin 14 pin 12 dc tested v cc = 5.0v w 18 60 40 20 0 20 40 100 60 120 80 output resistance ( ) 140 17 16 15 14 13 dc tested w ambient temperature ( c) pin 12 4.5v 5.0v 5.5v 19 60 40 20 0 20 40 100 60 120 80 output resistance ( ) 140 18 17 16 15 14 dc tested w pin 14 4.5v 5.0v 5.5v ambient temperature ( c) 40 60 40 20 0 20 40 100 60 120 80 power supply rejection ratio (db) 140 dc tested v cc1 = v cc2 = 5.0v ambient temperature ( c) 38 36 34 32 30 28 output referred d v cc = 0.1v 20 40 60 80 100 120 140 160 180 200 6 4 2 0 8 delay (ns) frequency (mhz) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 output resistance ( ) w frequency (mhz) 0.1 1 10 100 frequency (mhz) 80 output resistance ( ) w 70 60 50 40 30 20 10 0 v cc = 5.0v 0.1 1 10 100 80 output resistance ( ) w 70 60 50 40 30 20 10 0 frequency (mhz) +125 c +85 c +25 c 55 c pin 12 pin 14 v cc = 5.0v pin 12 t a = 25 c 4.5v 5.0v 5.5v sd00335 figure 9. typical performance characteristics (cont.)
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 13 typical performance characteristics (continued) 0 2 4 6 8 10 12 14 16 18 20 (ns) v cc = 5v t a = 25 c 20mv/div output step response sd00334 figure 10. typical performance characteristics (cont.) theory of operation transimpedance amplifiers have been widely used as the preamplifier in fiber-optic receivers. the SA5211 is a wide bandwidth (typically 180mhz) transimpedance amplifier designed primarily for input currents requiring a large dynamic range, such as those produced by a laser diode. the maximum input current before output stage clipping occurs at typically 50 m a. the SA5211 is a bipolar transimpedance amplifier which is current driven at the input and generates a differential voltage signal at the outputs. the forward transfer function is therefore a ratio of the differential output voltage to a given input current with the dimensions of ohms. the main feature of this amplifier is a wideband, low-noise input stage which is desensitized to photodiode capacitance variations. when connected to a photodiode of a few picofarads, the frequency response will not be degraded significantly. except for the input stage, the entire signal path is differential to provide improved power-supply rejection and ease of interface to ecl type circuitry. a block diagram of the circuit is shown in figure 11. the input stage (a1) employs shunt-series feedback to stabilize the current gain of the amplifier. the transresistance of the amplifier from the current source to the emitter of q 3 is approximately the value of the feedback resistor, r f =14.4k w . the gain from the second stage (a2) and emitter followers (a3 and a4) is about two. therefore, the differential transresistance of the entire amplifier, r t is r t v out (diff) i in 2r f 2(14.4k) 28.8k the single-ended transresistance of the amplifier is typically 14.4k w . the simplified schematic in figure 12 shows how an input current is converted to a differential output voltage. the amplifier has a single input for current which is referenced to ground 1. an input current from a laser diode, for example, will be converted into a voltage by the feedback resistor r f . the transistor q1 provides most of the open loop gain of the circuit, a vol 70. the emitter follower q 2 minimizes loading on q 1 . the transistor q 4 , resistor r 7 , and v b1 provide level shifting and interface with the q 15 q 16 differential pair of the second stage which is biased with an internal reference, v b2 . the differential outputs are derived from emitter followers q 11 q 12 which are biased by constant current sources. the collectors of q 11 q 12 are bonded to an external pin, v cc2 , in order to reduce the feedback to the input stage. the output impedance is about 17 w single-ended. for ease of performance evaluation, a 33 w resistor is used in series with each output to match to a 50 w test system. bandwidth calculations the input stage, shown in figure 13, employs shunt-series feedback to stabilize the current gain of the amplifier. a simplified analysis can determine the performance of the amplifier. the equivalent input capacitance, c in , in parallel with the source, i s , is approximately 7.5pf, assuming that c s =0 where c s is the external source capacitance. since the input is driven by a current source the input must have a low input resistance. the input resistance, r in , is the ratio of the incremental input voltage, v in , to the corresponding input current, i in and can be calculated as: r in v in i in r f 1 a vol 14.4k 71 203 more exact calculations would yield a higher value of 200 w . thus c in and r in will form the dominant pole of the entire amplifier; f 3db 1 2 r in c in assuming typical values for r f = 14.4k w , r in = 200 w , c in = 4pf f 3db 1 2 4pf 200 200mhz the operating point of q1, figure 12, has been optimized for the lowest current noise without introducing a second dominant pole in the pass-band. all poles associated with subsequent stages have been kept at sufficiently high enough frequencies to yield an overall single pole response. although wider bandwidths have been achieved by using a cascade input stage configuration, the present solution has the advantage of a very uniform, highly desensitized frequency response because the miller effect dominates over the external photodiode and stray capacitances. for example, assuming a source capacitance of 1pf, input stage voltage gain of 70, r in =
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 14 60 w then the total input capacitance, c in = 4 pf which will lead to only a 12% bandwidth reduction. noise most of the currently installed fiber-optic systems use non-coherent transmission and detect incident optical power. therefore, receiver noise performance becomes very important. the input stage achieves a low input referred noise current (spectral density) of 2.9pa/ hz . the transresistance configuration assures that the external high value bias resistors often required for photodiode biasing will not contribute to the total noise system noise. the equivalent input rms noise current is strongly determined by the quiescent current of q 1 , the feedback resistor r f , and the bandwidth; however, it is not dependent upon the internal miller-capacitance. the measured wideband noise was 41na rms in a 200mhz bandwidth. dynamic range calculations the electrical dynamic range can be defined as the ratio of maximum input current to the peak noise current: electrical dynamic range, d e , in a 200mhz bandwidth assuming i inmax = 60 m a and a wideband noise of i eq =41na rms for an external source capacitance of c s = 1pf. d e (max. input current) (peak noise current) d e (db) 20 log (60 10 6 ) (2 41 10 9 ) d e (db) 20 log (60 a) (58na) 60db in order to calculate the optical dynamic range the incident optical power must be considered. for a given wavelength l ; energy of one photon = hc watt sec (joule) where h=planck's constant = 6.6 10 -34 joule sec. c = speed of light = 3 10 8 m/sec c / l = optical frequency no. of incident photons/sec= p hs where p=optical incident power no. of generated electrons/sec = p hs where h = quantum efficiency no. of generated electron hole paris no. of incident photons i p hs e amps (coulombs sec.) where e = electron charge = 1.6 10 -19 coulombs responsivity r = e hs amp/watt i p r assuming a data rate of 400 mbaud (bandwidth, b=200mhz), the noise parameter z may be calculated as: 1 z i eq qb 41 10 9 (1.6 10 19 )(200 10 6 ) 1281 where z is the ratio of rms noise output to the peak response to a single hole-electron pair. assuming 100% photodetector quantum efficiency, half mark/half space digital transmission, 850nm lightwave and using gaussian approximation, the minimum required optical power to achieve 10 -9 ber is: p avmin 12 hc bz 12 2.3 10 19 200 10 6 (1281) 719nw 31.5dbm 1139nw 29.4dbm where h is planck's constant, c is the speed of light, l is the wavelength. the minimum input current to the SA5211, at this input power is: i avmin qp avmin hc 1 joule joule sec q i 707 10 9 1.6 10 19 2.3 10 19 = 500na choosing the maximum peak overload current of i avmax =60 m a, the maximum mean optical power is: p avmax hci avmax q 2.3 10 19 1.6 10 19 60 10 a 86 wor 10.6dbm (optical) thus the optical dynamic range, d o is: d o = p avmax - p avmin = -4.6 -(-29.4) = 24.8db. d o p avmax p avmin 31.5 ( 10.6) 20.8db 1. s.d. personick, optical fiber transmission systems , plenum press, ny, 1981, chapter 3. input output + output a1 a2 a3 a4 r f sd00327 figure 11. SA5211 block diagram this represents the maximum limit attainable with the SA5211 operating at 200mhz bandwidth, with a half mark/half space digital transmission at 850nm wavelength.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 15 input out out+ photodiode vb2 + + r 1 r 3 r 12 r 13 r 5 r 4 r 7 r 14 r 15 q 1 q 3 q 2 q 4 q 15 q 16 q 11 q 12 gnd 2 gnd 1 v cc2 v cc1 r 2 sd00328 figure 12. transimpedance amplifier v cc v eq3 v in i in input i f i b q1 q2 q3 r2 r3 r4 r f r1 i c1 sd00329 figure 13. shunt-series input stage application information package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. since the SA5211 has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible. constructing the board layout so that ground 1 and ground 2 have very low impedance paths has produced the best results. this was accomplished by adding a ground-plane stripe underneath the device connecting ground 1, pins 811, and ground 2, pins 1 and 2 on opposite ends of the so14 package. this ground-plane stripe also provides isolation between the output return currents flowing to either v cc2 or ground 2 and the input photodiode currents to flowing to ground 1. without this ground-plane stripe and with large lead inductances on the board, the part may be unstable and oscillate near 800mhz. the easiest way to realize that the part is not functioning normally is to measure the dc voltages at the outputs. if they are not close to their quiescent values of 3.3v (for a 5v supply), then the circuit may be oscillating. input pin layout necessitates that the photodiode be physically very close to the input and ground 1. connecting pins 3 and 5 to ground 1 will tend to shield the input but it will also tend to increase the capacitance on the input and slightly reduce the bandwidth. as with any high-frequency device, some precautions must be observed in order to enjoy reliable performance. the first of these is the use of a well-regulated power supply. the supply must be capable of providing varying amounts of current without significantly changing the voltage level. proper supply bypassing requires that a good quality 0.1 m f high-frequency capacitor be inserted between v cc1 and v cc2 , preferably a chip capacitor, as close to the package pins as possible. also, the parallel combination of 0.1 m f capacitors with 10 m f tantalum capacitors from each supply, v cc1 and v cc2 , to the ground plane should provide adequate decoupling. some applications may require an rf choke in series with the power supply line. separate analog and digital ground leads must be maintained and printed circuit board ground plane should be employed whenever possible. figure 14 depicts a 50mb/s ttl fiber-optic receiver using the bpf31, 850nm led, the SA5211 and the sa5214 post amplifier.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 8 9 10 11 12 13 14 led c pkdet thresh gnd a flag jam v ccd v cca gnd d ttl out in 1b in 1a c azp c azn out 1b in 8b out 1a in 8a r hyst r pkdet ne5214 gnd gnd gnd out gnd gnd out v cc v cc nc i in nc gnd gnd ne5210 r2 220 d1 led c9 100pf 100pf c7 .01 m f 47 m f c1 c2 gnd +v cc 0.1 m f r4 4k r3 47k v out (ttl) l3 10 m h l2 10 m h c11 c10 .01 m f .01 m f c13 c12 10 m f 10 m f c8 l1 10 m h bpf31 optical input r1 100 c5 1.0 m f c6 .01 m f .01 m f c4 10 m f c3 note: the ne5210/ne5217 combination can operate at data rates in excess of 100mb/s nrz the capacitor c7 decreases the ne5210 bandwidth to improve overall s/n ratio in the dc50mhz band, but does create extra high f requency noise on the ne5210 v cc pin(s). sd00330 figure 14. a 50mb/s fiber optic receiver
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 17 gnd 2 gnd 2 nc input nc gnd 1 gnd 1 gnd 1 gnd 1 out (+) gnd 2 out () 1 2 3 4 5 6 78 9 10 11 12 13 14 vcc1 vcc 2 sd00488 ecn no.: 06027 1992 mar 13 figure 15. SA5211 bonding diagram die sales disclaimer due to the limitations in testing high frequency and other parameters at the die level, and the fact that die electrical characteristics may shift after packaging, die electrical parameters are not specified and die are not guaranteed to meet electrical characteristics (including temperature range) as noted in this data sheet which is intended only to specify electrical characteristics for a packaged device. all die are 100% functional with various parametrics tested at the wafer level, at room temperature only (25 c), and are guaranteed to be 100% functional as a result of electrical testing to the point of wafer sawing only. although the most modern processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. there is no post waffle pack testing performed on individual die. since philips semiconductors has no control of third party procedures in the handling or packaging of die, philips semiconductors assumes no liability for device functionality or performance of the die or systems on any die sales. although philips semiconductors typically realizes a yield of 85% after assembling die into their respective packages, with care customers should achieve a similar yield. however, for the reasons stated above, philips semiconductors cannot guarantee this or any other yield on any die sales.
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 18 so14: plastic small outline package; 14 leads; body width 3.9 mm sot108-1
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 19 notes
philips semiconductors product specification SA5211 transimpedance amplifier (180mhz) 1998 oct 07 20 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 ? copyright philips electronics north america corporation 1998 all rights reserved. printed in u.s.a. date of release: 10-98 document order number: 9397 750 04624
data sheet status objective specification preliminary specification product specification product status development qualification production definition [1] this data sheet contains the design target or goal specifications for product development. specification may change in any manner without notice. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. data sheet status [1] please consult the most recently issued datasheet before initiating or completing a design.

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